Touch panel

A touch panel comprising:

• a microstructure over a first substrate, the microstructure comprising a lower electrode, an upper electrode over the lower electrode and a filler layer between the lower electrode and the upper electrode;
• a thin film transistor over the first substrate, the thin film transistor comprising a gate electrode and a semiconductor layer;
• a conductive layer over the first substrate, the conductive layer being in contact with the semiconductor layer;
• an insulating layer over the thin film transistor;
• a light-emitting element over the first substrate, the light-emitting element comprising a first electrode electrically connected to the conductive layer and over the insulating layer, a light-emitting layer over the first electrode and a second electrode over the light-emitting layer;
• a partition wall for covering an end portion of the first electrode and the microstructure, the partition wall having an opening overlapping with the filler layer;
• and
• a spacer over the upper electrode, the spacer overlapping with the filler layer,
• wherein the spacer is provided so as to fill the opening in the partition wall,
• wherein the microstructure does not overlap with the light-emitting layer,
• wherein the first electrode of the light-emitting element and the upper electrode of the microstructure are spaced from each other,
• wherein the lower electrode is formed using the same material as the conductive layer, and
• wherein the upper electrode is formed using the same material as the first electrode.

A method for manufacturing a touch panel, the method comprising the steps of:

• forming a gate electrode over a substrate;
• forming an insulating film over the gate electrode;
• forming a semiconductor layer over the insulating film;
• forming a first conductive layer and a lower electrode over the insulating film, wherein a part of the first conductive layer overlaps the semiconductor layer;
• forming an insulating layer over the first conductive layer and the lower electrode;
• forming an hole in the insulating layer, wherein the hole overlaps the lower electrode;
• forming a filler layer in the hole;
• forming a first electrode and an upper electrode spaced from each other, wherein the first electrode is electrically connected to the semiconductor layer and a part of the upper electrode overlaps the filler layer;
• forming a partition wall for covering an end portion of the first electrode and the upper electrode over the insulating layer;
• forming an opening in the partition wall, the opening overlapping with the filler layer;
• forming a spacer so as to fill the opening, wherein the spacer overlaps the filler layer;
• forming a light-emitting layer over the first electrode;
• and
• forming a second electrode over the light-emitting layer,
• wherein the lower electrode, the filler layer, the upper electrode and the spacer do not overlap with the light-emitting layer.