US 8,729,665 B2 · Integration substrate with a ultra-high-density capacitor and a through-substrate via

Abstract

An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. —The capacitor-electrode layers are alternatingly connected to a respective one of two capacitor terminals provided on the first or second substrate side. The trench capacitor and the through-substrate via are formed in respective trench openings and via openings in the semiconductor substrate, which have an equal lateral extension exceeding 10 micrometer. This structure allows, among other advantages, a particularly cost-effective fabrication of the integration substrate because the via openings and the trench openings in the substrate can be fabricated simultaneously.

Claims14

Dependent claims

An integration device (102), the integration device comprising

a semiconductor substrate (106) with a first substrate side (1) and an opposite second substrate side (2);
a through-substrate via (162) extending from the first substrate side (1) to the second substrate side (2);
a trench capacitor (118) in the semiconductor substrate (106);
wherein
the trench capacitor has a trench filling (120 to 138) that includes a number of at least four electrically conductive capacitor-electrode layers (122, 126, 130, 134, 138) in an alternating arrangement with dielectric layers (120, 124, 128, 132), such that the different capacitor-electrode layers are electrically isolated from each other;
the capacitor-electrode layers are connected to capacitor terminals (150, 160) provided on the first or second substrate side, and wherein
the trench capacitor (118) and the through-substrate via (162) are formed in respective trench (119) and via openings (161) in the semiconductor substrate, which have an equal lateral extension (w) exceeding 10 micrometer.

4 more elements

Dependencies are inferred from the claim text.

Integration substrate with a ultra-high-density capacitor and a through-substrate via

Life of this patent

Integration substrate with a ultra-high-density capacitor and a through-substrate via

Life of this patent

Abstract

Claims14