Surface switchable photoresist
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Yu Chang, Chih-Cheng Chiu
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Abstract
Lithography methods on a semiconductor substrate are described. The methods include coating a resist layer on the substrate, wherein the resist layer comprises a resist polymer configured to turn soluble to a base solution in response to reaction with an acid, and a switchable polymer that includes a base soluble polymer having a carboxylic acid, hydroxyl, lactone, or anhydride functional group, performing a pre-exposure bake on the resist layer, exposing the resist-coated substrate, and developing the exposed substrate with a developing solution.
Claims20
A method for performing lithography on a semiconductor substrate, the method comprising:
- coating a resist layer on the substrate, wherein the resist layer comprises a resist polymer configured to turn soluble to a base solution in response to reaction with an acid, and a switchable polymer that includes one of:
- wherein R1, R2, and R3 are H and R4 is a fluorinated alkyl group of 1 to 20 carbon atoms;
- R5, R6, and R7 are H and R8 is a straight chain fluorinated alkyl group of 1 to 20 carbon atoms;
- R9 and R10 are H, R11 is H or a straight, branched, or cyclic alkyl group of 1 to 20 carbons, and R12 and R13 are a straight, branched, or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbons;
- and R14 and R15 are H, and R16 is H or a straight, branched, or cyclic alkyl group of 1 to 20 carbons, and R17 and R18 are a straight, branched, or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbons;
- performing a pre-exposure bake on the resist layer;
- exposing the resist-coated substrate;
- and
- developing the exposed substrate with a developing solution.
A method for performing lithography on a semiconductor substrate, the method comprising:
- coating a resist layer on the substrate, wherein the resist layer comprises a resist polymer configured to turn soluble to a base solution in response to reaction with an acid, a quencher base configured to stop a chemical amplified reaction during a post-exposure baking step, and a switchable polymer that includes one of:
- wherein R1, R2, and R3 are H and R4 is a fluorinated alkyl group of 1 to 20 carbon atoms;
- R5, R6, and R7 are H and R8 is a straight chain fluorinated alkyl group of 1 to 20 carbon atoms;
- R9 and R10 are H, R11 is H or a straight, branched, or cyclic alkyl group of 1 to 20 carbons, and R12 and R13 are a straight, branched, or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbons;
- and R14 and R15 are H, and R16 is H or a straight, branched, or cyclic alkyl group of 1 to 20 carbons, and R17 and R18 are a straight, branched, or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbons;
- performing a pre-exposure bake on the resist layer;
- exposing the resist-coated substrate;
- and
- developing the exposed substrate with a developing solution.
A method for performing lithography on a semiconductor substrate, the method comprising:
- coating a resist layer on the substrate, wherein the resist layer comprises a resist polymer configured to turn soluble to a base solution in response to reaction with an acid and a switchable polymer that includes one of:
- wherein R1, R2, and R3 are H and R4 is a fluorinated alkyl group of 1 to 20 carbon atoms;
- R5, R6, and R7 are H and R8 is a straight chain fluorinated alkyl group of 1 to 20 carbon atoms;
- R9 and R10 are H, R11 is H or a straight, branched, or cyclic alkyl group of 1 to 20 carbons, and R12 and R13 are a straight, branched, or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbons;
- and R14 and R15 are H, and R16 is H or a straight, branched, or cyclic alkyl group of 1 to 20 carbons, and R17 and R18 are a straight, branched, or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbons,
- performing a pre-exposure bake on the resist layer;
- immersing the substrate in an immersion exposure liquid;
- exposing the immersed resist-coated substrate to an ultraviolet light source, extreme ultraviolet light source, or e-beam laser;
- and
- developing the exposed substrate with a developing solution.
Dependencies are inferred from the claim text.