Optoelectronic component and method for producing an optoelectronic component
AssigneeOSRAM Opto Semiconductors GmbH
InventorsAdrian Stefan Avramescu, Christoph Eichler, Uwe Strauss, Volker Haerle
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Abstract
An optoelectronic component contains an epitaxial layer sequence based on a nitride compound semiconductor having an active layer and an epitaxial growth substrate comprising Al1-xGaxN, where 0<x<0.95. In a method for producing an optoelectronic component an epitaxial growth substrate of Al1-x(InyGa1-y)xN or In1-xGaxN, where 0<x<0.99 and 0≦y≦1, is provided and an epitaxial layer sequence, which is based on a nitride compound semiconductor and contains an active layer, is grown thereon.
Claims4
An optoelectronic component comprising:
- an epitaxial layer based on a nitride compound semiconductor, the epitaxial layer sequence having an active layer;
- an epitaxial growth substrate of Al1-x(InyGa1-y)xN or In1-xGaxN, where 0<x<0.99 and 0≦y≦1;
- and
- multiple buffer layers of InyAlxGa1-x-yN, where x<0.9 and y<0.1, applied on the epitaxial growth substrate,
- wherein the epitaxial layer sequence comprises a Distributed Bragg Reflector comprising multiple layer pairs, each pair containing a first layer of Iny1Alx1Ga1-x1-y1N and a second layer of Iny2Alx2Ga1-x2-y2N, wherein x1>0.01 and x2>0.05 applies for the aluminum content.
An optoelectronic component comprising:
- an epitaxial layer sequence based on a nitride compound semiconductor, the epitaxial layer sequence having an active layer;
- first and second waveguide layers, wherein the active layer is between the first and second waveguide layers;
- a cladding layer;
- and
- an epitaxial growth substrate of Al1-x(InyGa1-y)xN or In1-xGaxN, where 0<x<0.99 and 0≦y≦1;
- wherein:
- the optoelectronic component is an edge-emitting semiconductor laser;
- the second waveguide layer, as seen from the active layer, is opposite the epitaxial growth substrate and is followed by the cladding layer;
- and
- no cladding layer is disposed between the epitaxial growth substrate and the waveguide layer facing the epitaxial growth substrate.
Dependencies are inferred from the claim text.