Nitride semiconductor laser device
AssigneeNichia Corporation
InventorYu Higuchi
Life of this patent
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Abstract
A nitride semiconductor laser device includes: a stack, the stack including an n-type layer and a p-type layer each including a nitride semiconductor; an n-electrode electrically coupled to the n-type layer; a p-electrode electrically coupled to the p-type layer; and a thermally conductive portion disposed in contact with the p-type layer in a region which is different from the region where the p-electrode is connected, wherein the thermally conductive portion is electrically insulated from the p-electrode. Manufacturing steps specific to nitride semiconductors are employed to form the device. An optical apparatus, such as an optical disc device, a display device, or a lighting device includes such a nitride laser device and depends its functions thereto.
Claims29
A nitride semiconductor laser device comprising:
- a stack including an n-type layer, an active layer, and a p-type layer, each comprising a nitride semiconductor, the active layer being disposed between the n-type layer and the p-type layer;
- an n-electrode electrically coupled to the n-type layer;
- a p-electrode electrically coupled to the p-type layer;
- a thermally conductive portion disposed in contact with the p-type layer in a region which is different from the region where the p-electrode is connected;
- and
- an insulating portion disposed between the thermally conductive portion and the p-electrode.
A method of manufacturing a semiconductor laser device, the method comprising:
- forming a stack including an n-type layer, an active layer, and a p-type layer, each comprising a nitride semiconductor, the active layer being formed between the n-type layer and the p-type layer;
- forming a thermally conductive portion in contact with the p-type layer;
- forming an insulating portion in contact with the thermally conductive portion and the p-type layer;
- forming a p-electrode electrically coupled to the p-type layer in a region which is different from the region where the thermally conductive portion is connected;
- and
- forming an n-electrode electrically coupled to the n-type layer,
- wherein the insulating portion is disposed between the thermally conductive portion and the p-electrode.
An optical apparatus including a nitride semiconductor laser device, wherein the nitride semiconductor laser device comprises:
- a stack including an n-type layer, an active layer, and a p-type layer, each comprising a nitride semiconductor, the active layer being disposed between the n-type layer and the p-type layer;
- an n-electrode electrically coupled to the n-type layer;
- a p-electrode electrically coupled to the p-type layer;
- a thermally conductive portion disposed in contact with the p-type layer in a region which is different from the region where the p-electrode is connected;
- and
- an insulating portion disposed between the thermally conductive portion and the p-electrode
- wherein the nitride semiconductor laser device forms an operable portion of the optical apparatus.
A nitride semiconductor laser device comprising:
- a stack including an n-type layer, and active layer, and a p-type layer, each comprising a nitride semiconductor, the active layer being disposed between the n-type layer and the p-type layer;
- an n-electrode electrically coupled to the n-type layer;
- a p-electrode electrically coupled to the p-type layer;
- a thermally conductive portion disposed in contact with at least one of the p-type layer and the n-type layer in a region which is different from the region where the respective p-electrode or the n-electrode is connected;
- and
- an insulating portion disposed between the thermally conductive portion and the p-electrode or between the thermally conductive portion and the n-electrode.
Dependencies are inferred from the claim text.