Semiconductor devices and methods for changing operating characteristics and semiconductor systems including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHo Jung Kim, Chul Woo Park, Sang Beom Kang, Hyun Ho Choi, Jung Min Lee, Seung Eon Ahn
Life of this patent
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Abstract
A method of changing a parameter in a semiconductor device is provided. The method includes receiving and storing data in a storage region; and changing at least one between a DC characteristic and an AC timing characteristic of a parameter, used to access a non-volatile memory cell included in a memory core of the semiconductor device, according to the data stored in the storage.
Claims20
A method of controlling a memory system that includes a memory device and a memory controller, the method comprising:
- monitoring a characteristic of the memory device, generating a data set including a command and data based on a monitoring result, and transmitting the data set to the memory device, using the memory controller;
- decoding, by the memory device, the command from the data set, and storing the data in a storage region of the memory device based on the decoding result;
- generating, by the memory device, a parameter control signal based on the data stored in the storage region;
- and
- changing, by the memory device, an AC timing characteristic of a parameter used to access a memory cell of the memory device according to the parameter control signal.
A memory system comprising:
- a memory device including memory cells;
- and
- a memory controller configured to monitor a characteristic of the memory device, generate a data set including a command and data based on a monitoring result, and to transmit the data set to the memory device,
- wherein the memory device further comprises:
- a control logic configured to decode the command included in the data set;
- a storage region configured to store the data included in the data set based on the decoding result;
- a control block configured to generate a parameter control signal for changing an AC timing characteristic of a parameter used to access the memory cells, based on the data stored in the storage region;
- and
- an access block configured to access the memory cells according to the parameter control signal.
A memory device comprising:
- a memory core including memory cells;
- a control logic configured to decode a command included in a data set received from a memory controller;
- a storage region configured to store data included in the data set based on the decoding result;
- a control block configured to generate a parameter control signal for changing an AC timing characteristic of a parameter used to access the memory cells, based on the data stored in the storage region;
- and
- an access block configured to access the memory cells according to the parameter control signal.
Dependencies are inferred from the claim text.