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US 8,711,624 B2Granted
Memory device and self interleaving method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSeonghyeog Choi, Hong Rak Son, Junjin Kong, Jaehong Kim, KyoungLae Cho, Yong June Kim
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Abstract
A memory device includes a memory cell array, a self interleaver configured to interleave and load data on the fly into a buffer circuit using an interleaving scheme, and a control logic configured to control programming of the interleaved data in the memory cell array.
Claims42
A memory device, comprising:
- a memory cell array;
- a self interleaver configured to interleave and load data on the fly into a buffer circuit using an interleaving scheme;
- and
- a control logic configured to control programming of the interleaved data in the memory cell array, wherein:
- the memory cell array includes a plurality of physical pages each capable of storing a plurality of logical pages;
- the self interleaver is configured to divide each logical page into a plurality of sectors and to perform the interleaving scheme by mixing sectors of the respectively different logical pages;
- and
- the control logic controls programming of the plurality of intermixed logical pages in a physical page of the memory cell array.
5 more elements
A method of operating a memory device, comprising:
- receiving data;
- interleaving and loading received data on the fly into a buffer circuit using an interleaving scheme;
- and
- programming the interleaved data in a memory cell array of the memory device, wherein the memory cell array includes a plurality of physical pages each capable of storing a plurality of logical pages, and wherein the method further comprises:
- dividing each of the plurality of logical pages into a plurality of sectors,
- intermixing sectors of different ones of the logical pages;
- and
- programming the intermixed logical pages in one or more of the physical pages of the memory cell array.
5 more elements
Dependencies are inferred from the claim text.