Back to results
US 8,711,616 B2Granted
Single check memory devices and methods
AssigneeMicron Technology, Inc.
InventorsVishal Sarin, Aaron Yip, Tomoharu Tanaka
Life of this patent
Estimating the term…
Abstract
Memory devices and methods of operating memory devices are shown. Configurations described include circuits to perform a single check between programming pulses to determine a threshold voltage with respect to desired benchmark voltages. In one example, the benchmark voltages are used to change a programming speed of selected memory cells.
Claims23
A method, comprising:
- applying a sequential series of program voltages to a memory cell;
- checking the threshold voltage of the memory cell a single time between each application of one of the program voltages in the sequential series of program voltages;
- storing a first value if the threshold voltage of the memory cell is greater than a first voltage;
- storing a second value instead of the first value, if the threshold voltage of the memory cell is greater than a second voltage, where the second voltage is greater than the first voltage;
- and
- slowing a programming rate of the memory cell if the first value is stored or inhibiting further programming of the memory cell if the second value is stored.
3 more elements
A method, comprising:
- applying a sequential series of program voltages to a memory cell;
- checking the threshold voltage of the memory cell a single time between each application of one of the program voltages in the sequential series of program voltages;
- storing a first value if the threshold voltage of the memory cell is greater than a first voltage;
- storing a second value instead of the first value, if the threshold voltage of the memory cell is greater than a second voltage, where the second voltage is greater than the first voltage;
- and
- changing a data line voltage associated with the memory cell to slow down programming of the memory cell if the threshold voltage is between the first voltage and the second voltage.
3 more elements
A method, comprising:
- applying a sequential series of program voltages to a memory cell;
- checking the threshold voltage of the memory cell a single time between each application of one of the program voltages in the sequential series of program voltages;
- latching a first value if the threshold voltage of the memory cell is greater than a first voltage;
- latching a second value instead of the first value, if the threshold voltage of the memory cell is greater than a second voltage, where the second voltage is greater than the first voltage;
- raising a data line voltage associated with the memory cell to slow down programming of the memory cell if the threshold voltage is between the first voltage and the second voltage;
- and
- raising a data line voltage associated with the memory cell to inhibit further programming of the memory cell if the threshold voltage is above the second voltage.
4 more elements
A memory device, comprising:
- a multistate memory cell;
- a threshold voltage check circuit coupled to a data line of the multistate memory cell, and configured to check a threshold voltage of the memory cell a single time between incremented programming pulses, wherein the threshold voltage check circuitry comprises a latch configured to store a first value responsive to the threshold voltage reaching a first threshold voltage, and a second value instead of the first value, responsive to the threshold voltage reaching a second threshold voltage, the second threshold voltage being higher than the first threshold voltage;
- and
- a programming voltage circuit to slow a programming rate of the memory cell if the first value is stored or inhibit further programming of the memory cell if the second value is stored.
1 more element
Dependencies are inferred from the claim text.