Non-volatile flash-RAM memory with magnetic memory

A flash-RAM memory capable of storing data that is read or written using transistors comprising:

• a plurality of transistors, residing in an isolated silicon area of a monolithic die;
• non-volatile random access memory (RAM) including an array of magnetic memory cells, the non-volatile RAM formed on the monolithic die and including magnetic memory cells;
• and
• a non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory being made of non-magnetic memory, the non-volatile page-mode memory and the non-volatile RAM residing on the monolithic die, the non-volatile page-mode memory being operable to store data for reading, the non-volatile page-mode memory and the non-volatile RAM being coupled to the plurality of transistors through bit lines or word lines and the plurality of transistors being shared by the non-volatile RAM and the non-volatile page-mode memory, at least one magnetic memory cell of the flash-RAM being accessed by a single transistor of the plurality of transistors and at least one page of the non-volatile page-mode memory being accessed by a single transistor of the plurality of transistors,
• wherein data is read, written and erased a page at a time to the non-volatile page-mode memory, with a page comprising a plurality of bits, whereas, the non-volatile RAM is written to and read from one bit at a time, further wherein the non-volatile RAM is organized into at least two stacks of magnetic memory cells.