Non-volatile memory array and device using erase markers
AssigneeSamsung Electronics Co., Ltd.
InventorsHui-Kwon Seo, Yeong-Taek Lee, Yong-Shik Shin
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Abstract
A non-volatile memory device, non-volatile memory cell array and related method of operation are disclosed. The non-volatile memory cell array includes a defined data unit stored in a plurality of non-volatile memory cells capable of being electrically overwritten within the non-volatile memory cell array, and an erase marker corresponding to the data unit and indicating whether the data unit is in an erased state or a not-erased state.
Claims19
A non-volatile memory cell array comprising:
- a defined data unit stored in a plurality of non-volatile memory cells capable of being electrically overwritten within the non-volatile memory cell array;
- an erase marker corresponding to the data unit and indicating whether the data unit is in an erased state or a not-erased state;
- and
- a read-write circuit configured, in response to a read request, to generate default read data when the erase marker indicates that the data unit is in the erased state, and to read the data unit from the plurality of memory cells when the erase marker indicates that the data unit is in the not-erased state.
A non-volatile memory device comprising:
- a non-volatile memory cell array divided into pages, each page including a plurality of non-volatile memory cells storing data and at least one non-volatile memory cell storing a corresponding erase marker indicating whether the plurality of non-volatile memory cells is in an erased state or a not-erased state;
- and
- a read-write circuit configured in response to a received read command indicating a target page among the plurality of pages to read and output data stored in the plurality of non-volatile memory cells of the target page when the erase marker indicates the not-erased state for the target page, and output erase default data when the erase marker indicates the not-erased state for the target page.
A method of operating a non-volatile memory device comprising a non-volatile memory cell array divided into pages, each page including a plurality of non-volatile memory cells storing data and at least one non-volatile memory cell storing a corresponding erase marker indicating whether the plurality of non-volatile memory cells is in an erased state or a not-erased state, the method comprising:
- in response to a read command received by the non-volatile memory device indicating a target page among the plurality of pages, reading and outputting data stored in the plurality of non-volatile memory cells of the target page when the erase marker indicates the not-erased state for the target page;
- and otherwise,
- outputting erase default data when the erase marker indicates the not-erased state for the target page.
Dependencies are inferred from the claim text.