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US 8,711,609 B2Granted
Nonvolatile memory device
AssigneeSK hynix Inc.
InventorSung Yeon Lee
Life of this patent
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Abstract
A nonvolatile memory device comprises a memory cell configured to store or output data in a magneto-resistance device in response to a write current applied to a bit line and a source line. A voltage detector is configured to sense potentials loaded in the bit line and the source line. A write current controller configured to control activation of a write control signal in response to an output of the voltage detector, and a write driver configured to control amounts of write current applied to the memory cell according to the activation of the write control signal.
Claims10
A nonvolatile memory device, comprising:
- a memory cell configured to read or write data in a magneto-resistance device in response to a write current applied to a bit line and a source line;
- a write driver configured to provide the write current to the memory cell in response to a write driving signal;
- a transition detector coupled to the bit line and the source line and configured to sense a resistance change of the magneto-resistance device to output a transition detecting signal;
- and
- a write controller configured to control a pulse width of the write driving signal according to the transition detecting signal.
2 more elements
Dependencies are inferred from the claim text.