Resistive memory element sensing using averaging

A circuit for measuring resistance of a memory element, comprising:

• a plurality of row lines and a plurality of column lines;
• a plurality of memory elements having a resistance value, each coupled at one end to a row line and at another end to a column line;
• a plurality of row switches respectively coupled to the row lines for selectively applying a constant potential to a selected row line;
• a voltage source for supplying a voltage to the row lines;
• and,
• a plurality of sensing circuits respectively connected to the plurality of column lines, each sensing circuit capable of supplying a constant electrical potential to a respective column line;
• wherein, when a row switch selectively activates a row line to which a memory element is connected, a column sensing circuit for a selected column line to which the memory element is connected is operative to sense the resistance value of the memory element, the column sensing circuit providing a current through the memory element the value of which represents the resistance value of the memory element.