Resistive random access memory cell and resistive random access memory module
AssigneeIndustrial Technology Research Institute
InventorsFrederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen
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Abstract
A resistive random access memory (RRAM) cell including a first electrode, a second electrode, and a plurality of repeated sets of layers is provided. Each of the sets of layers includes a resistance-changing layer, a barrier layer, and an ionic exchange layer between the resistance-changing layer and the barrier layer, wherein a thickness of each of the resistance-changing layer, the barrier layer and the ionic exchange layer exceeds a Fermi wavelength, and the thickness each of the resistance-changing layer and ionic exchange layer are less than an electron mean free path. Further, a RRAM module including the aforesaid RRAM cell and a switch is also provided.
Claims26
A resistive random access memory module (RRAM module) electrically coupled to a RESET voltage, the RRAM module comprising:
- a switch electrically coupled to the RESET voltage;
- and
- a resistive random access memory cell (RRAM cell) comprising a first electrode, a second electrode, and a plurality of repeated sets of layers, each of the sets of layers comprising a resistance-changing layer, a barrier layer, and an ionic exchange layer between the resistance-changing layer and the barrier layer, where the thickness of each of the resistance-changing layer, the barrier layer and the ionic exchange layer exceeds a Fermi wavelength, and the thickness of the resistance-changing layer and the ionic exchange layer are each less than an electron mean free path, the first electrode being electrically coupled to the switch, wherein a resistance of the repeated sets of layers of the RRAM cell is R1, a resistance of the switch is R2, and 3≦R1/R2 during RESET operation.
A resistive random access memory (RRAM) cell, comprising:
- a first electrode;
- a second electrode;
- a plurality of repeated sets of layers, each of the sets of layers comprising:
- a resistance-changing layer;
- a barrier layer;
- and
- an ionic exchange layer between the resistance-changing layer and the barrier layer, wherein a thickness of each of the resistance-changing layer, the barrier layer and the ionic exchange layer exceeds a Fermi wavelength, and the thickness of each of the resistance-change layer and the ionic exchange layer is less than an electron mean free path.
A resistive random access memory (RRAM) cell, comprising:
- a top electrode;
- a bottom electrode;
- a resistance-changing layer in contact with the top electrode;
- a contact to the resistance-changing layer containing a region of ionic exchange with the resistance changing layer;
- a resistive buffer layer comprising a material whose resistance is dependent on the voltage applied from one end to the other, whose thickness is less than a bulk electron mean free path, in contact with the contact to the resistance-changing layer;
- a contact to the resistive buffer layer located at the opposite end from the contact to the resistance-changing layer, and contacting the bottom electrode.
Dependencies are inferred from the claim text.