High density molecular memory storage with read and write capabilities

A method of forming a memory element for use in a memory storage device comprising:

• providing a single ferromagnetic (FM) layer having one or more ferromagnetic materials;
• forming one or more first molecule layers that is positioned on the FM layer where charge transfer and interface chemistry between the one or more first molecule layers and FM layer induces a magnetic moment in the one or more first molecule layers, the magnetic moment stored in the one or more first molecule layers acts as bit information that is retained or written into the one or more first molecular layers;
• and
• bonding the one or more spin-filter layers to the one or more first molecule layers to form a physical or a chemical π-dimer layer structure.

A method of storing bit information in a memory element comprising:

• providing a single ferromagnetic (FM) layer having one or more ferromagnetic materials;
• inducing a magnetic moment in one or more first molecule layers that are positioned on the FM layer through charge transfer and interface chemistry between the one or more first molecule layers and FM layer, the magnetic moment stored in the one or more first molecule layers acting as said bit information that is retained or written into the one or more first molecule layers;
• and
• bonding the one or more spin-filter layers to the one or more first molecule layers in order to form a physical or a chemical π-dimer layer structure.