Polarization-coupled ferroelectric unipolar junction memory and energy storage device

A memory device comprising:

• a plurality of memory cells, each memory cell comprising:
• a first material having a fixed spontaneous polarization,
• a second material having a switchable spontaneous polarization, and
• a third material having a fixed spontaneous polarization, the second material being positioned between and in contact with the first and third materials;
• and
• a controller to write data to and read data from the memory cells, in which the controller is configured to apply a first write signal to one of the memory cells to set the spontaneous polarization of the second material to a first state to cause a combination of the first material, the second material, and the third material to have a first resistance, and apply a second write signal to the memory cell to set the spontaneous polarization of the second material to a second state to cause the combination of the first material, the second material, and the third material to have a second resistance, and the controller is configured to read data from the memory cell by detecting the resistance of the combination of the first material, the second material, and the third material.

A method of fabricating a memory device, the method comprising:

• providing a plurality of memory cells on a substrate, each memory cell comprising:
• a first semiconductor material having a spontaneous polarization,
• a resistive ferroelectric material having a switchable spontaneous polarization, and
• a second semiconductor material having a spontaneous polarization, the resistive ferroelectric material being positioned between and in contact with the first and second semiconductor materials;
• and
• providing a controller for writing data to and reading data from the memory cells, in which the controller is configured to apply a first write signal to one of the memory cells to set the spontaneous polarization of the resistive ferroelectric material to a first state to cause a combination of the first semiconductor material, the resistive ferroelectric material, and the second semiconductor material to have a first resistance, and apply a second write signal to the memory cell to set the spontaneous polarization of the resistive ferroelectric material to a second state to cause the combination of the first semiconductor material, the resistive ferroelectric material, and the second semiconductor material to have a second resistance, and the controller is configured to read data from the memory cell by detecting the resistance of the combination of the first semiconductor material, the resistive ferroelectric material, and the second semiconductor material.

A method of using a memory device comprising a plurality of memory cells, each memory cell comprising a first semiconductor material having a spontaneous polarization, a resistive ferroelectric material having a switchable spontaneous polarization, and a second semiconductor material having a spontaneous polarization, the resistive ferroelectric material being positioned between and in contact with the first and second semiconductor materials, the method comprising:

• writing first data to a memory cell by applying a first voltage pulse of a first polarity to the memory cell to cause the memory cell to enter a first state by setting the spontaneous polarization of the resistive ferroelectric material to a first state to cause a combination of the first semiconductor material, the resistive ferroelectric material, and the second semiconductor material to have a first resistance;
• writing second data to the memory cell by applying a second voltage pulse of a second polarity to the memory cell to cause the memory cell to enter a second state by setting the spontaneous polarization of the resistive ferroelectric material to a second state to cause the combination of the first semiconductor material, the resistive ferroelectric material, and the second semiconductor material to have a second resistance;
• and
• reading data from the memory cell by sensing current flowing through the memory cell to determine whether the memory cell is in the first state or the second state.

An energy storage device comprising:

• a plurality of energy storage cells, each energy storage cell comprising
• a first semiconductor material having a spontaneous polarization,
• a resistive ferroelectric material having a switchable spontaneous polarization, and
• a second semiconductor material having a spontaneous polarization, the resistive ferroelectric material being positioned between and in contact with the first and second semiconductor materials;
• a controller to store energy in a combination of the first semiconductor material, the resistive ferroelectric material, and the second semiconductor material of a cell by applying a first voltage pulse to the cell and to release the energy from the combination of the first semiconductor material, the resistive ferroelectric material, and the second semiconductor material of the cell by applying a second voltage pulse to the cell;
• and
• a path to allow the energy released from the combination of the first semiconductor material, the resistive ferroelectric material, and the second semiconductor material of the cell to be transmitted to a load coupled to the energy storage device.