Memory system with data line switching scheme

A method for operating a data storage system of groups of non-volatile storage elements in which each group has its own set of first local data lines and its own set of second local data lines, comprising:

• selectively connecting by first selection circuits the set of first local data lines for each group of the non-volatile storage elements to global data lines;
• selectively connecting by second selection circuits each set of first local data lines to control lines in communication with a first subset of the non-volatile storage elements of the respective group;
• concurrently beginning a memory operation on the first subsets of non-volatile storage elements in the groups;
• independently detecting completion of the memory operation for each non-volatile storage element of the respective first subset;
• and
• responsive to independently detecting completion of the memory operation on a respective non-volatile storage element of the respective first subset, independently selectively connecting a respective second local data line by a respective first selection circuit to a respective global data line and selectively connecting the respective second local data line by a respective second selection circuit to a control line of a second non-volatile storage element in a second subset of non-volatile storage elements of the respective group and commencing a memory operation on the second non-volatile storage element independently of any other memory operations being performed in respective group.