ESD protection circuit and ESD protection device thereof
AssigneeUnited Microelectronics Corp.
InventorsChang-Tzu Wang, Tien-Hao Tang, Kuan-Cheng Su
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Abstract
The ESD protection circuit is electrically connected between a first power rail and a second power rail, and includes an ESD protection device, a switching device electrically connected between the ESD protection device and a first power rail, and a low-pass filter electrically connected between the first power rail and the first switching device. The ESD protection device includes a BJT and a first resistor electrically connected between a base of the BJT and a first power rail. When no ESD event occurs, a potential of the base is larger than or equal to a potential of an emitter of the BJT. When the ESD event occurs, the potential of the base is smaller than the potential of the emitter.
Claims13
An ESD protection device, comprising:
- a substrate, having a first conductive type;
- a first well, having a second conductive type and disposed in the substrate, and the first well being electrically connected to a first switching device;
- a first doped region, having the first conductive type and disposed in the first well, and the first doped region and the first well being electrically connected to a first power rail;
- a second doped region, having the second conductive type and disposed in the substrate, and the second doped region and the substrate being electrically connected to a second power rail;
- a third doped region, having the second conductive type and disposed in the first well between the first doped region and the second doped region, and the first well being electrically connected to the first switching device by the third doped region, wherein the third doped region partially surrounds the first doped region;
- and
- a fourth doped region, having the second conductive type and disposed in the first well, and the first doped region being disposed between the fourth doped region and the second doped region, wherein the fourth doped region electrically connects the first well and the first power rail, the first well and the fourth doped region constitutes a first resistor, and the third doped region doesn't extend to be disposed between the first doped region and the fourth doped region in an arranged direction of the first doped region and the fourth doped region;
- wherein when an ESD event does not occur, the first switching device is turned on, and a potential of the first well is larger than or equal to a potential of the first doped region;
- and when the ESD event occurs, the first switching device is turned off, and the potential of the first well is smaller than the potential of the first doped region.
An ESD protection device, comprising:
- a substrate, having a first conductive type;
- a first well, having a second conductive type and disposed in the substrate;
- a second well, having the first conductive type and disposed in the substrate adjacent to the first well, and the second well being electrically connected to a second switching device;
- a first doped region, having the first conductive type and disposed in the first well, and the first doped region and the first well being electrically connected to a first power rail;
- a second doped region, having the second conductive type and disposed in the second well, and the second doped region and the second well being electrically connected to a second power rail, wherein the second switching device is electrically connected to the second power rail;
- and
- a sixth doped region, having the first conductive type and disposed in the second well between the first doped region and the second doped region, and the second well being electrically connected to the second switching device by the sixth doped region;
- wherein when an ESD event does not occur, the second switching device is turned on, and a potential of the second well is smaller than or equal to a potential of the second doped region;
- and when the ESD event occurs, the second switching device is turned off, and the potential of the second well is larger than the potential of the second doped region.
Dependencies are inferred from the claim text.