High throughput thin film characterization and defect detection

A non-transitory, computer-readable medium, comprising:

• code for causing a computer to receive a spectral response of an unfinished, multi-layer semiconductor wafer across a first spectral range;
• code for causing the computer to determine an optical dispersion metric of a first layer of the multi-layer semiconductor wafer based at least in part on the spectral response;
• code for causing the computer to determine a band structure characteristic indicative of an electrical performance of the first layer of the multi-layer semiconductor wafer based at least in part on the dispersion metric of the multi-layer semiconductor wafer across a second spectral range within the first spectral range;
• and
• code for causing the computer to determine an estimate of the electrical performance of the multi-layer semiconductor wafer based at least in part on the band structure characteristic.

A system comprising:

• an illuminator;
• a spectrometer;
• and
• one or more computer systems configured to:
• receive a spectral response of an unfinished, multi-layer semiconductor wafer across a first spectral range;
• determine an optical dispersion metric of a first layer of the multi-layer semiconductor wafer based at least in part on the spectral response;
• determine a band structure characteristic indicative of an electrical performance of the first layer of the multi-layer semiconductor wafer based at least in part on the dispersion metric of the multi-layer semiconductor wafer across a second spectral range within the first spectral range;
• and
• determine an estimate of the electrical performance of the multi-layer semiconductor wafer based at least in part on the band structure characteristic.