Lithographic apparatus and device manufacturing method
AssigneeASML Netherlands B.V.
InventorMarc Van Kemenade
Life of this patent
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Abstract
A lithographic apparatus and method are used for manufacturing a device. A projection system is configured to project a patterned radiation beam onto a target portion of the substrate. A Higher Order Wafer Alignment (HOWA) model is applied so as to model higher order distortions across the substrate. The model is applied using at least one input parameter for which at least one intra-field effect has been taken into account. In an example, the intra-field effect taken into account is the ScanUp-ScanDown effect and/or the ScanLeft-ScanRight effect.
Claims20
A lithographic apparatus comprising:
- an illumination system configured to condition a radiation beam;
- a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam;
- a substrate table constructed to hold a substrate;
- a projection system configured to project the patterned radiation beam onto a target portion of the substrate;
- and
- a processor configured to apply an nth order wafer alignment model that compensates for substrate deformations, where n is an integer greater than 1, the nth order alignment model being configured to reduce an impact of at least one intra-field effect on the nth order wafer alignment model.
A device manufacturing method comprising:
- projecting a patterned beam of radiation onto a target portion of a substrate;
- and
- applying an nth order wafer alignment model that compensate for substrate deformations, where n is an integer greater than 1, the nth order wafer alignment model being configured to reduce an impact of at least one intra-field effect on the nth order wafer alignment model.
Dependencies are inferred from the claim text.