Solid-state imaging device and method for manufacturing the same

A solid-state imaging device comprising:

• a semiconductor substrate including a plurality of light-receiving portions formed therein:
• color filters individually formed on the light-receiving portions of the semiconductor substrate;
• and
• partition walls individually formed between the color filters, wherein
• each of the partition walls includes at least two layers, and an interface positioned between the two layers and facilitating reflection of penetration light from outside,
• a wiring layer is formed on a principal surface on a side of the semiconductor substrate in which the plurality of light-receiving portions are formed,
• the partition walls and the color filters are formed on a pixel region in which the plurality of light-receiving portions in the wiring layer are formed,
• an insulating film, wiring for a peripheral circuit, and a protective film are sequentially formed in this order on an outer periphery of the light-receiving portions in the wiring layer, and
• materials of at least the two layers of the partition walls are individually same as materials of the insulating film and the protective film.

A method for manufacturing a solid-state imaging device, comprising:

• a partition wall forming step forming partition walls on a semiconductor substrate in which a plurality of light-receiving portions are formed and between the light-receiving portions;
• and;
• a wiring layer forming step forming a wiring layer on the semiconductor substrate;
• a filter forming step forming, on the wiring layer, color filters individually on the light receiving portions, wherein
• a laminated film with at least two layers is formed in the partition wall forming step, and
• the wiring layer is formed between the semiconductor substrate and the partition walls.