Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHajime Kimura
Life of this patent
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Abstract
A semiconductor device includes a transistor, a light-emitting element, a first wiring, a driver circuit having a function of controlling the potential of the first wiring, a second wiring, a first switch, a second switch, a third switch, a fourth switch, a first capacitor, and a second capacitor. One of a source and a drain of the transistor is connected to the light-emitting element. With this structure, voltage applied between the source and the gate of the transistor can be corrected in anticipation of variations in threshold voltage, so that the current supplied to the light-emitting element can be corrected.
Claims20
A semiconductor device comprising:
- a first transistor;
- a load;
- a first wiring;
- a second wiring;
- a first switch;
- a second switch;
- a third switch;
- a fourth switch;
- a first capacitor;
- and
- a second capacitor,
- wherein the first switch is configured to select conduction or non-conduction between the first wiring and one of a pair of electrodes of the first capacitor,
- wherein the one of the pair of electrodes of the first capacitor is electrically connected to one of a pair of electrodes of the second capacitor,
- wherein the second switch is configured to select conduction or non-conduction between the other of the pair of electrodes of the first capacitor and one of a source and a drain of the first transistor,
- wherein the other of the pair of electrodes of the first capacitor is electrically connected to a gate of the first transistor,
- wherein the third switch is configured to select conduction or non-conduction between the one of the pair of electrodes of the first capacitor and the other of the source and the drain of the first transistor,
- wherein the other of the pair of electrodes of the second capacitor is electrically connected to the load,
- wherein the other of the source and the drain of the first transistor is electrically connected to the load, and
- wherein the fourth switch is configured to select conduction or non-conduction between the second wiring and the one of the source and the drain of the first transistor.
A semiconductor device comprising:
- an n-channel transistor;
- a light-emitting element;
- a first wiring;
- a driver circuit configured to control a potential of the first wiring;
- a second wiring;
- a first switch;
- a second switch;
- a third switch;
- a fourth switch;
- a first capacitor;
- and
- a second capacitor,
- wherein the first switch is configured to select conduction or non-conduction between the first wiring and one of a pair of electrodes of the first capacitor,
- wherein the one of the pair of electrodes of the first capacitor is electrically connected to one of a pair of electrodes of the second capacitor,
- wherein the second switch is configured to select conduction or non-conduction between the other of the pair of electrodes of the first capacitor and one of a source and a drain of the n-channel transistor,
- wherein the other of the pair of electrodes of the first capacitor is electrically connected to a gate of the n-channel transistor,
- wherein the third switch is configured to select conduction or non-conduction between the one of the pair of electrodes of the first capacitor and the other of the source and the drain of the n-channel transistor,
- wherein the other of the pair of electrodes of the second capacitor is electrically connected to an anode of the light-emitting element,
- wherein the other of the source and the drain of the n-channel transistor is electrically connected to the anode of the light-emitting element,
- wherein the fourth switch is configured to select conduction or non-conduction between the second wiring and the one of the source and the drain of the n-channel transistor, and
- wherein the driver circuit controls the potential of the first wiring so that a period during which the potential of the first wiring is equal to or lower than a potential of a cathode of the light-emitting element is provided.
A semiconductor device comprising:
- a p-channel transistor;
- a light-emitting element;
- a first wiring;
- a driver circuit configured to control a potential of the first wiring;
- a second wiring;
- a first switch;
- a second switch;
- a third switch;
- a fourth switch;
- a first capacitor;
- and
- a second capacitor,
- wherein the first switch is configured to select conduction or non-conduction between the first wiring and one of a pair of electrodes of the first capacitor,
- wherein the one of the pair of electrodes of the first capacitor is electrically connected to one of a pair of electrodes of the second capacitor,
- wherein the second switch is configured to select conduction or non-conduction between the other of the pair of electrodes of the first capacitor and one of a source and a drain of the p-channel transistor,
- wherein the other of the pair of electrodes of the first capacitor is electrically connected to a gate of the p-channel transistor,
- wherein the third switch is configured to select conduction or non-conduction between the one of the pair of electrodes of the first capacitor and the other of the source and the drain of the p-channel transistor,
- wherein the other of the pair of electrodes of the second capacitor is electrically connected to a cathode of the light-emitting element,
- wherein the other of the source and the drain of the p-channel transistor is electrically connected to the cathode of the light-emitting element,
- wherein the fourth switch is configured to select conduction or non-conduction between the second wiring and the one of the source and the drain of the p-channel transistor, and
- wherein the driver circuit controls the potential of the first wiring so that a period during which the potential of the first wiring is equal to or higher than a potential of an anode of the light-emitting element is provided.
Dependencies are inferred from the claim text.