Internal wiring structure of semiconductor device

An internal wiring structure of a semiconductor device that has a first wiring conductor and a second wiring conductor that are disposed so as to oppose each other and in parallel to each other in a case and have currents flowing in the same direction from an input part to an output part, wherein:

• the first wiring conductor and the second wiring conductor are formed from flat plates;
• in the first wiring conductor, first notches are formed alternately along a plurality of straight lines extending parallel from one of opposing side walls to the other side wall, in such a manner as to stretch, beyond first central points between the side walls, from one of the side walls to the other side wall and vice versa;
• in the second wiring conductor, second notches are formed alternately immediately below the plurality of straight lines, in such a manner as to stretch, beyond second central points between side walls, from one of the side walls to the other side wall and vice versa, the one side wall being positioned on a side opposite to the side wall having the first notches;
• and
• a length of the first notches is equal to that of the second notches formed immediately below the first notches, the first central points and the second central points overlap with each other, the first notches and the second notches partially overlap with each other, a direction of the current flowing through the first wiring conductor along the first notches is opposite to a direction of the current flowing through the second wiring conductor along the second notches, and a mutual inductance between the first wiring conductor and the second wiring inductor is thereby reduced.