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US 8,710,660 B2Granted
Hybrid interconnect scheme including aluminum metal line in low-k dielectric
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Tien-I Bao
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Abstract
A device includes a first low-k dielectric layer, and a copper-containing via in the first low-k dielectric layer. The device further includes a second low-k dielectric layer over the first low-k dielectric layer, and an aluminum-containing metal line over and electrically coupled to the copper-containing via. The aluminum-containing metal line is in the second low-k dielectric layer.
Claims20
A device comprising:
- a first low-k dielectric layer;
- a copper-containing via in the first low-k dielectric layer;
- a second low-k dielectric layer over the first low-k dielectric layer;
- and
- an aluminum-containing metal line over and electrically coupled to the copper-containing via, wherein the aluminum-containing metal line is in the second low-k dielectric layer.
2 more elements
A device comprising:
- a first low-k dielectric layer;
- a first copper-containing via in the first low-k dielectric layer;
- a second low-k dielectric layer over the first low-k dielectric layer;
- and
- a first conductive line in the second low-k dielectric layer and electrically coupled to the first copper-containing via, wherein the first conductive line comprises:
- a first conductive barrier layer;
- and
- a first aluminum-containing metal line over the first conductive barrier layer;
- and
- a dielectric barrier layer comprising:
- first portions on sidewalls of the first aluminum-containing metal line;
- a second portion overlapping the first aluminum-containing metal line;
- and
- a third portion underlying the second low-k dielectric layer.
11 more elements
A device comprising:
- a first low-k dielectric layer;
- a copper-containing via in the first low-k dielectric layer;
- a second low-k dielectric layer over the first low-k dielectric layer;
- an aluminum-containing metal line over and electrically coupled to the copper-containing via, wherein the aluminum-containing metal line is in the second low-k dielectric layer;
- a third low-k dielectric layer over the second low-k dielectric layer;
- and
- a metal line and a via in the third low-k dielectric layer, wherein the metal line and the via form a dual damascene structure comprising copper.
4 more elements
Dependencies are inferred from the claim text.