Semiconductor device and method of manufacturing the same
AssigneeRohm Co., Ltd.
InventorsKei Moriyama, Shuichi Tamaki, Shuichi Sako, Mitsuhide Kori, Junji Goto, Tatsuya Sawada
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Abstract
A semiconductor device includes an interlayer dielectric film, a passivation film, made of an insulating material, formed on the interlayer dielectric film, an uppermost wire, made of a material mainly composed of copper, formed between the surface of the interlayer dielectric film and the passivation film, and a wire covering film, made of a material mainly composed of aluminum, interposed between the passivation film and the surface of the uppermost wire for covering the surface of the uppermost wire.
Claims50
A semiconductor device comprising:
- an interlayer dielectric film;
- a passivation film, made of an insulating material, formed on the interlayer dielectric film;
- an uppermost wire, made of a material mainly composed of copper, formed between a surface of the interlayer dielectric film and the passivation film;
- and
- a wire covering film, made of a material mainly composed of aluminum, interposed between the passivation film and a surface of the uppermost wire, the wire covering film covering the surface of the uppermost wire;
- wherein the wire covering film extends in both a horizontal direction along an upper surface of the uppermost wire and a perpendicular direction along a side surface of the uppermost wire, the wire covering film covering the uppermost wire.
A semiconductor device comprising:
- an interlayer dielectric film;
- an uppermost wire, made of a material mainly composed of copper, formed on a surface of the interlayer dielectric film;
- a wire covering film, made of a material mainly composed of aluminum, formed on the uppermost wire;
- an alignment mark, made of the same material as the wire covering film, formed on the surface of the interlayer dielectric film;
- and
- a passivation film, made of an insulating material, covering the surfaces of the interlayer dielectric film and the wire covering film and provided with an opening exposing the alignment mark;
- wherein the wire covering film extends in both a horizontal direction along an upper surface of the uppermost wire and a perpendicular direction along a side surface of the uppermost wire, the wire covering film covering the uppermost wire.
A semiconductor device comprising:
- an interlayer dielectric film;
- a wire, made of a material mainly composed of copper, protruding from a surface of the interlayer dielectric film;
- and
- a passivation film, made of an insulating material, covering the surfaces of the interlayer dielectric film and the wire,
- wherein the wire has:
- a first wire portion extending in a first direction;
- a second wire portion extending in a second direction orthogonal to the first direction;
- and
- one or a plurality of connecting wire portions, connecting an end portion of the first wire portion and an end portion of the second wire portion with each other, extending on a first straight line intersecting with the first direction and the second direction respectively, and
- a length of a plurality of second straight lines, connecting a junction between the first wire portion and the connecting wire portion and a junction between the second wire portion and the connecting wire portion with each other, in the first direction and the second direction, respectively, are greater than 1 μm and less than or equal to 10 μm.
Dependencies are inferred from the claim text.