Back to results
US 8,710,653 B2Granted
Chip on chip semiconductor device including an underfill layer having a resin containing an amine-based curing agent
AssigneeKabushiki Kaisha Toshiba
InventorsMasatoshi Fukuda, Hiroshi Watabe
Life of this patent
Estimating the term…
Abstract
A semiconductor device, includes: a wiring substrate, a stacked body mounted on the wiring substrate, an underfill layer filled into gaps between respective semiconductor chips of the stacked body; and a molding body made up of a molding resin covered and formed at outside of the stacked body and so on. The underfill layer is made up of a cured product of a resin material containing an amine-based curing agent, and the cured product has a Tg of 65° C. or more and 100° C. or less.
Claims16
A semiconductor device, comprising:
- a wiring substrate having a wiring layer at least at one principle surface;
- a stacked body mounted at the principle surface of the wiring substrate, in which two or more semiconductor chips are stacked and disposed with a predetermined interval and respective semiconductor chips are electrically connected with each other via bumps;
- an underfill layer including a resin and filled into gaps between the respective semiconductor chips of the stacked body, the resin containing an amine-based curing agent, and the resin having a glass transition temperature (Tg) of 65° C. or more and 100° C. or less;
- and
- a molding body including a molding resin and covered and formed at outside of the stacked body.
2 more elements
Dependencies are inferred from the claim text.