US 8,710,633 B2 · Semiconductor overlapped PN structure and manufacturing method thereof

Abstract

The present invention discloses a semiconductor overlapped PN structure and manufacturing method thereof. The method includes: providing a substrate; providing a first mask to define a P (or N) type well and at least one overlapped region in the substrate; implanting P (or N) type impurities into the P (or N) type well and the at least one overlapped region; providing a second mask having at least one opening to define an N (or P) type well in the substrate, and to define at least one dual-implanted region in the at least one overlapped region; implanting N (or P) type impurities into the N (or P) type well and the at least one dual-implanted region such that the at least one dual-implanted region has P type and N type impurities.

Claims4

Dependent claims

A semiconductor overlapped PN structure comprising:

a substrate;
a P type well in the substrate;
an N type well in the substrate;
and
at least one overlapped region between the P type well and the N type well, the at least one overlapped region occupying a first area inside which there are a plurality of second areas smaller than the first area, wherein the first area contains impurities of a first conductivity type, and each of the second areas contains, in addition to the impurities of the first conductivity type, impurities of a second conductivity type which is opposite to the first conductivity type, wherein the first conductivity type is P type or N type.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/864,196Filed 16 Apr 2013 · division

Priority

20 Apr 2011

Published

US 2013/0256846 A13 Oct 2013

Granted

29 Apr 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10D 62/10
Semiconductor bodies, or regions thereof, of devices having potential barriers: shapes, relative sizes or dispositions of the regions of the…
H10D 62/125
Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions: shapes of junctions between the…
H10D 62/60
Semiconductor bodies, or regions thereof, of devices having potential barriers: impurity distributions or concentrations
H10P 30/22
Into semiconductor materials, e.g. for doping: using masks

Semiconductor overlapped PN structure and manufacturing method thereof

Life of this patent

Semiconductor overlapped PN structure and manufacturing method thereof

Life of this patent

Abstract

Claims4