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US 8,710,630 B2Granted
Mechanisms for marking the orientation of a sawed die
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHsien-Wei Chen
Life of this patent
Estimating the term…
Abstract
Mechanisms for identifying orientation of a sawed die are provided. By making metal pattern in the corner stress relief region in one corner of the die different from the other corners, users can easily identify the orientation of the die.
Claims21
A structure for identifying the orientation of a sawed die, comprising:
- a corner of the sawed die with a first pattern of a metal layer being different from a second pattern of the metal layer at other corners of the sawed die, wherein the first and second patterns are in corner stress relief (CSR) regions of the sawed die, and wherein no active devices, interconnect structures, or bumps are placed in the CSR regions,
- wherein the corner with the first pattern differs from the other three corners in a visibly detectable way by using a high-power magnifier having a 40× magnifying capability.
A structure for identifying the orientation of a sawed die, comprising:
- a corner of the sawed die with a first pattern of a metal in a corner stress relief (CSR) region of the sawed die, wherein no active devices, interconnect structures, or bumps are placed in the CSR region;
- and
- at least two other corners of the sawed die with a second pattern of metal in a CSR region, wherein the second pattern is different from the first pattern.
A structure for identifying the orientation of a sawed die, comprising:
- a corner of the sawed die with a first pattern of a metal layer being different from a second pattern of the metal layer at other corners of the sawed die, wherein the first and second patterns are in corner stress relief (CSR) regions of the sawed die, wherein no active devices, interconnect structures, or bumps are placed in the CSR regions, wherein the CSR regions are right isosceles triangles, and wherein each of the right isosceles triangles has a short length in a range from about 20 μm to about 100 μm.
Dependencies are inferred from the claim text.