Switchable memory diodes based on ferroelectric/conjugated polymer heterostructures and/or their composites
AssigneeSpansion LLC
InventorJuri H. Krieger
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Abstract
An embodiment of the present memory cell a first layer of a chosen conductivity type, and a second layer which includes ferroelectric semiconductor material of the opposite conductivity type, the layers forming a pn junction. The first layer may be a conjugated semiconductor polymer, or may also be of ferroelectric semiconductor material. The layers are provided between first and electrodes. In another embodiment, a single layer of a composite of conjugated semiconductor polymer and ferroelectric semiconductor material is provided between first and second electrodes. The various embodiments may be part of a memory array.
Claims5
A memory cell comprising:
- a first layer comprising ferroelectric material;
- and
- a second layer on the first layer comprising ferroelectric material wherein the second layer is one of n or p conductivity type and wherein the first layer is of the same conductivity type as the second layer.
Dependencies are inferred from the claim text.