Method of manufacturing semiconductor devices using ion implantation

A method of manufacturing a super-junction semiconductor device, the method comprising:

• growing by epitaxy a first sub-layer on a substrate layer;
• implanting impurities of a first conductivity type in first sections of a first surface of the first sub-layer using an aligned low divergence ion implant process, wherein a main beam direction deviates from a main crystal direction, along which channeling of implant ions occurs, by at most 1 degree and a main beam incidence angle divergence is at most ±0.5 degree;
• growing by epitaxy a second sub-layer on the first sub-layer;
• and
• implanting impurities of the first conductivity type in sections of a first surface of the second sub-layer in a projection of the first sections along the main crystal direction using the aligned low divergence ion implant process;
• wherein implanting impurities of the first conductivity type includes two or more implant processes at different acceleration voltages.

A method of manufacturing a super-junction semiconductor device, the method comprising:

• growing by epitaxy a first sub-layer on a substrate layer;
• implanting impurities of a first conductivity type in first sections of a first surface of the first sub-layer using an aligned low divergence ion implant process, wherein a main beam direction deviates from a main crystal direction, along which channeling of implant ions occurs, by at most 1 degree and a main beam incidence angle divergence is at most ±0.5 degree;
• growing by epitaxy a second sub-layer on the first sub-layer;
• and
• implanting impurities of the first conductivity type in sections of a first surface of the second sub-layer in a projection of the first sections along the main crystal direction using the aligned low divergence ion implant process;
• wherein the sub-layers are grown as in-situ doped p-type layers and the first conductivity type is the n type.