Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region

A semiconductor device comprising:

• a semiconductor substrate having a main surface with a ground voltage applied to said semiconductor substrate;
• a first insulating film formed to cover said main surface of said semiconductor substrate;
• a semiconductor layer of a predetermined conductivity type formed to cover said first insulating film;
• a second insulating film formed to cover said semiconductor layer;
• and
• a first electrode formed to cover a predetermined region of said second insulating film with a predetermined voltage higher than said ground voltage applied to said first electrode,
• in a region located between said first electrode and said semiconductor substrate, there being located:
• a region where a hollow is formed between said semiconductor substrate and said first insulating film;
• and
• a region where no hollow is formed between said semiconductor substrate and said first insulating film,
• in a portion of said semiconductor layer that is located directly above said region where said hollow is formed, an element-formed region being formed which is electrically connected to said first electrode and in which a predetermined semiconductor element is formed,
• between said first electrode and a portion of said semiconductor substrate that is located in said region where no hollow is formed, an electric field alleviation region being formed, and
• in said electric field alleviation region, a plurality of capacitors being formed that are connected in series between said predetermined voltage applied to said first electrode and said ground voltage applied to said semiconductor substrate.