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US 8,710,615 B2Granted
Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device
AssigneeInfineon Technologies AG
InventorGerhard Schmidt
Life of this patent
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Abstract
According to an embodiment, a semiconductor device includes a semiconductor substrate and an amorphous semi-insulating layer on the semiconductor substrate.
Claims21
A semiconductor device, comprising:
- a semiconductor substrate;
- an active area and a peripheral area surrounding the active area;
- an edge passivation formed in the peripheral area;
- and
- an amorphous semi-insulating layer on the semiconductor substrate, wherein the amorphous semi-insulating layer has an electrical resistance with a negative temperature coefficient and has a specific conductivity from about 10−8 Ωcm to about 10−15 Ωcm;
- wherein the amorphous semi-insulating layer is formed in the peripheral area.
3 more elements
A temperature sensor, comprising an amorphous semi-insulating layer comprised of amorphous diamond-like carbon or amorphous SixC1-x with 0<x<1, having an electrical resistance with a negative temperature coefficient and having a specific conductivity from about 10−8 Ωcm to about 10−15 Ωcm.
A method of manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate;
- and
- forming an amorphous semi-insulating layer on the semiconductor substrate, wherein the amorphous semi-insulating layer is comprised of amorphous diamond-like carbon or amorphous SixC1-x with 0<x<1 and has an electrical resistance with a negative temperature coefficient and a specific conductivity from about 10−8 Ωcm to about 10−15 Ωcm.
Dependencies are inferred from the claim text.