Pickup device and method for manufacturing the same
AssigneeCanon Kabushiki Kaisha
InventorsYuichiro Yamashita, Masahiro Kobayashi, Yusuke Onuki
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Abstract
A pickup device according to the present invention includes a photoelectric conversion portion, a charge holding portion configured to include a first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. A second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A third semiconductor region is disposed below the second semiconductor region. An impurity concentration of the third semiconductor region is higher than the impurity concentration of the first semiconductor region.
Claims10
A pickup device including a plurality of pixels, each pixel comprising:
- a photoelectric conversion portion that generates charges in accordance with incident light;
- a charge holding portion that includes a first semiconductor region of a first conductivity type that holds the generated charges in a portion different from the photoelectric conversion portion;
- and
- a transfer portion that includes a transfer gate electrode that controls a potential between the charge holding portion and a sense node,
- wherein the charge holding portion includes a control electrode that is disposed above the first semiconductor region via an insulating film,
- wherein a second semiconductor region of a second conductivity type, is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode,
- wherein a third semiconductor region of a first conductivity type, is disposed in a charge path below the second semiconductor region and has a portion which is not overlapped with the first semiconductor region, and
- wherein an impurity concentration of the portion of the third semiconductor region is higher than an impurity concentration of the first semiconductor region.
A pickup device including a plurality of pixels, each pixel comprising:
- a photoelectric conversion portion configured to generate charges in accordance with incident light;
- a charge holding portion configured to include a first semiconductor region of a first conductivity type that holds the generated charges in a portion different from the photoelectric conversion portion;
- and
- a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node,
- wherein the charge holding portion includes a control electrode that is disposed above the first semiconductor region via an insulating film,
- wherein a second semiconductor region of a second conductivity type, is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode,
- wherein a third semiconductor region of a first conductivity type, is disposed in a charge path below the second semiconductor region, and
- wherein an impurity concentration of the third semiconductor region is higher than an impurity concentration of the first semiconductor region,
- wherein a fourth semiconductor region is disposed below the first semiconductor region so as to form a PN junction together with the first semiconductor region,
- wherein the sense node includes a floating diffusion, and wherein a fifth semiconductor region is disposed at a position deeper than the fourth semiconductor region, the fifth semiconductor region extending below at least part of the fourth semiconductor region, the transfer gate electrode, and the floating diffusion,
- wherein the fifth semiconductor region is configured to include a plurality of semiconductor regions that are at different depths,
- wherein, in each of the pixels, an end portion on a photoelectric conversion portion side of the fifth semiconductor region is at a position away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the second semiconductor region, and
- wherein a sixth semiconductor region that constitutes part of the photoelectric conversion portion is disposed below at least part of the second semiconductor region.
Dependencies are inferred from the claim text.