Semiconductor device having a bonding pad and shield structure of different thickness
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShuang-Ji Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Jeng-Shyan Lin, Cheng-Ying Ho
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Abstract
A semiconductor device includes a device substrate having a front side and a back side corresponding to a front side and a back side of the semiconductor device, a metal feature formed on the front side of the device substrate, a bonding pad disposed on the back side of the semiconductor device and in electrical communication with the metal feature, and a shield structure disposed on the back side of the device substrate in which the shield structure and the bonding pad have different thicknesses relative to each other.
Claims12
A semiconductor device, comprising:
- a device substrate having a front side and a back side corresponding to a front side and a back side of the semiconductor device;
- a metal feature formed on the front side of the device substrate;
- a bonding pad disposed on the back side of the semiconductor device and in electrical communication with the metal feature;
- a shield structure disposed on the back side of the device substrate in which the shield structure and the bonding pad have different thicknesses relative to each other;
- a first passivation layer formed over the shield structure and directly over the bonding pad;
- and
- an insulating layer, wherein the shield structure is formed over the insulating layer, and wherein the shield structure does not contact the device substrate.
A semiconductor device, comprising:
- a substrate having a bonding region and a non-bonding region and having a front side and a back side corresponding to a front side and a back side of the semiconductor device;
- a metal feature disposed on the front side of the substrate;
- a first conductive material disposed within a trench on the back side of the semiconductor device in the bonding region, wherein the first conductive material is in electrical communication with the metal feature, and wherein the first conductive material has a first thickness;
- a second conductive material disposed on the back side of the substrate in the non-bonding region, in which the second conductive material has a second thickness, and in which the first thickness is different from the second thickness;
- a first passivation layer formed directly over the first conductive material and over the second conductive material;
- and
- an insulating layer, wherein the second conductive material is formed over the insulating layer, and wherein the second conductive material does not contact the substrate.
Dependencies are inferred from the claim text.