US 8,710,610 B2Granted

Solid-state imaging apparatus and imaging system

AssigneeCanon Kabushiki Kaisha

InventorsShoji Kono, Shin Kikuchi, Yuichiro Yamashita, Masaru Fujimura, Shinichiro Shimizu, Yu Arishima

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Abstract

A solid-state imaging apparatus including pixels each including a photoelectric conversion element, and a light shielding layer covering the photoelectric conversion element is provided. For each of the photoelectric conversion elements, the light shielding layer includes a light shielding portion which shields a portion of incident light to the photoelectric conversion element, and an aperture which passes another portion of the incident light. The pixels include first and second pixels which have different areas on a planar view of the photoelectric conversion element. The area of the photoelectric conversion element in the first pixel is larger than the area of the photoelectric conversion element in the second pixel on the planar view. An area of the light shielding portion included in the first pixel is larger than an area of the light shielding portion included in the second pixel.

Claims8

Dependent claims

A solid-state imaging apparatus including a plurality of pixels each including a photoelectric conversion element, and a light shielding layer covering the photoelectric conversion element, wherein

for each of the photoelectric conversion elements of the plurality of pixels, the light shielding layer includes a light shielding portion which shields a portion of incident light to the photoelectric conversion element, and an aperture which passes another portion of the incident light,
the plurality of pixels include a first pixel and a second pixel,
the area of the photoelectric conversion element included in the first pixel is larger than the area of the photoelectric conversion element included in the second pixel on the planar view, and
an area of the light shielding portion that shields a portion of the incident light to the photoelectric conversion element included in the first pixel is larger than an area of the light shielding portion that shields a portion of the incident light to the photoelectric conversion element included in the second pixel.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 13/167,408Filed 23 Jun 2011
Priority: JP 2010-1552597 Jul 2010
Published: US 2012/0007203 A112 Jan 2012
Granted: 29 Apr 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10F 77/334
For filtering or shielding light, e.g. multicolour filters for photodetectors: for shielding light, e.g. light blocking layers or cold shields for…
H04N 25/616
Noise processing, e.g. detecting, correcting, reducing or removing noise: involving a correlated sampling function, e.g. correlated double…
H04N 25/771
Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components: comprising storage means other than…
H04N 25/78
Addressed sensors, e.g. MOS or CMOS sensors: readout circuits for addressed sensors, e.g. output amplifiers or A/D converters