Magnetic memory and method of manufacturing the same

A magnetic memory comprising

• at least one memory cell comprising a magnetoresistive element as a memory element, first and second electrodes that energize the magnetoresistive element, and an insulating film covering the magnetoresistive element,
• the magnetoresistive element comprising:
• a first magnetic layer having a variable magnetization direction perpendicular to a film plane;
• a tunnel barrier layer on the first magnetic layer;
• and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane,
• the first magnetic layer comprising:
• a first region;
• and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region,
• the second magnetic layer comprising:
• a third region;
• and a fourth region outside the third region so as to surround the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region,
• wherein a mean size of the second region in a film thickness direction is larger than a mean size of the fourth region in the film thickness direction.