Method and system for providing magnetic junctions having improved characteristics

A magnetic memory comprising:

• a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction having a magnetoresistive region, the at least one magnetic junction including a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer, at least a portion of the magnetoresistive region being between the pinned layer and the free layer, the at least one insulating layer being adjacent to at least one of the free layer and the pinned layer such that the at least one of the free layer and the pinned layer are between the at least one insulating layer and the nonmagnetic spacer layer and the at least one insulating layer is external to the magnetoresistive region, the at least one magnetic insertion layer adjoining the at least one insulating layer, the at least one magnetic insertion layer being external to the magnetoresistive region, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction;
• and
• a plurality of bit lines.