High-density 3-dimensional structure
AssigneeSTMicroelectronics (Tours) SAS
InventorJean-Luc Morand
Life of this patent
Estimating the term…
Abstract
A 3-D structure formed in a recess of a substrate delimited by walls, including a large number of rectangle parallelepipedic blades extending from the bottom of the recess to the substrate surface while being oriented perpendicularly to one another and formed in a pattern covering the whole surface of the recess, some blades being non-secant to one of the walls, each non-secant blade being connected to one of the walls by at least another perpendicular blade.
Claims27
A 3-D structure formed in a recess of a substrate delimited by walls, comprising parallelepipedic thin blades extending from the bottom of the recess to the substrate surface, wherein the blades are oriented perpendicularly to one another and formed in a pattern covering the whole surface of said recess, wherein some blades are non-secant to one of the walls, wherein each non-secant blade is connected to one of the walls by at least another perpendicular blade, wherein the blades have at least one cross-sectional thickness perpendicular to a surface of the blade that is the same thickness for each blade.
A structure comprising:
- a substrate;
- a recess in the substrate surface;
- sets of thin blades formed in the recess, wherein the sets of thin blades form a pattern covering the whole surface of the recess;
- and
- each set of thin blades comprises an assembly of orthogonal thin blades with at least one thin blade joined to a wall of the recess, and wherein trenches separating the blades form a pattern following a Moore fractal curve.
A structure comprising:
- a plurality of thin blades, wherein the plurality of thin blades have at least one cross-sectional thickness perpendicular to a surface of the blade smaller than 0.8 μm;
- and
- a plurality of trenches separating the plurality of thin blades from one another, wherein the plurality of thin blades are separated from one another by a distance smaller than 0.8 μm, and wherein the plurality of trenches have a depth, in the substrate, greater than 100 μm.
Dependencies are inferred from the claim text.