Semiconductor device
AssigneeRenesas Electronics Corporation
InventorKo Noguchi
Life of this patent
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Abstract
An allowable current amount of a ballast resistance is increased without increasing the width of the ballast resistance. At least one of resistances included in a ballast resistance has a first resistance and a second resistance. The first resistance extends in a first direction (X direction in FIG. 1) in which current flows in a protection element. The second resistance element is coupled in parallel to the first resistance element and extends in the first direction. The second resistance element and the first resistance element are located on the same straight line.
Claims11
A semiconductor device comprising:
- a protection element;
- and
- a ballast resistance coupled to the protection element,
- wherein at least one of a plurality of resistances included in the ballast resistance includes
- a plurality of first resistance elements extending in a first direction in which current flows in the protection element;
- and
- a second resistance element which is coupled in parallel to the first resistance element and extends in the first direction.
The semiconductor device according to claim wherein the first resistance elements and the second resistance elements are located in the same layer.
The semiconductor device according to claim wherein the protection element includes a MOS transistor and the first direction is a channel length direction of the MOS transistor.
Dependencies are inferred from the claim text.