High voltage fast recovery trench diode

A method for forming a fast recovery trench diode comprising:

• forming an epitaxial layer of a first conductivity type;
• forming a barrier layer of the first conductivity type above the epitaxial layer, wherein a doping concentration of the barrier layer is greater than a doping concentration of the epitaxial layer;
• forming a top-layer of a second conductivity type above the barrier layer;
• forming one or more trenches that extend at least through the top-layer and the barrier layer
• disposing a conductive material in the one or more trenches with a dielectric material lining the trenches between the conductive material and sidewalls of the trenches;
• forming a contact pocket of the second conductivity type in an upper portion of the top-layer, wherein a doping concentration of the contact pocket is greater than a doping concentration of the top-layer;
• forming an electrically floating pocket of the first conductivity type underneath the contact pocket;
• and
• forming a conductive contact layer above the top-layer, wherein the contact layer is electrically connected to the contact pocket, the top-layer, and the conductive material.