SONOS stack with split nitride memory layer
AssigneeCypress Semiconductor Corporation
InventorsFredrick Jenne, Krishnaswamy Ramkumar
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Abstract
A semiconductor device and method of manufacturing the same are provided. In one embodiment, semiconductor device comprises a split charge-trapping region comprising two nitride layers with charge traps distributed therein, the two nitride layers separated by one or more oxide layers. The two nitride layers include a first nitride layer closer to a substrate over which the split charge-trapping region is formed, and a second nitride layer on the other side of the one or more oxide layers. The second nitride layer comprises a majority of the charge traps. Other embodiments are also described.
Claims11
A semiconductor device comprising:
- a split charge-trapping region comprising two nitride layers with charge traps distributed therein, the two nitride layers separated by one or more oxide layers,
- wherein the two nitride layers comprise a first nitride layer closer to a substrate over which the split charge-trapping region is formed and a second nitride layer on the other side of the one or more oxide layers, and wherein the second nitride layer comprises a majority of the charge traps.
A semiconductor device comprising:
- a split charge-trapping region comprising two nitride layers separated by one or more oxide layers,
- wherein the two nitride layers comprise a first nitride layer closer to a substrate over which the split charge-trapping region is formed and a second nitride layer on the other side of the one or more oxide layers, and wherein the first nitride layer comprises a high oxygen concentration relative to the second nitride layer.
Dependencies are inferred from the claim text.