Semiconductor device, integrated circuit and method of manufacturing an integrated circuit
AssigneeInfineon Technologies AG
InventorsAndreas Meiser, Werner Schwetlick
Life of this patent
Estimating the term…
Abstract
A semiconductor device is formed in a semiconductor substrate comprising a first main surface and includes a control gate disposed in a lower portion of a first trench formed in the first main surface, a floating gate disposed in the first trench above the control gate and insulated from the control gate, a source region of a first conductivity type, a body region of a second conductivity type, and a drain region of the first conductivity type.
Claims19
A semiconductor device, formed in a semiconductor substrate comprising a first main surface, the semiconductor device comprising:
- a control gate disposed in a lower portion of a first trench formed in the first main surface;
- a floating gate disposed in the first trench above the control gate and insulated from the control gate;
- a source region of a first conductivity type, a body region of a second conductivity type, and a drain region of the first conductivity type, wherein a portion of the body region is adjacent to the floating gate.
An integrated circuit formed in a semiconductor substrate comprising a first main surface, the integrated circuit comprising:
- a power transistor;
- and
- a memory device, the memory device including:
- a control gate disposed in a lower portion of a first trench formed in the first main surface;
- a floating gate disposed in the first trench above the control gate and being insulated from the control gate;
- a source region of a first conductivity type, a body region of a second conductivity type, and a drain region of the first conductivity type.
A method of manufacturing an integrated circuit, comprising:
- forming a power transistor in a semiconductor substrate comprising a first main surface;
- and
- forming a memory device in the semiconductor substrate, wherein forming the memory device includes:
- forming a first trench in the first main surface of the semiconductor substrate;
- forming a control gate in a lower portion of the first trench;
- forming a floating gate in the first trench above the control gate so as to be insulated from the control gate;
- forming a source region of a first conductivity type, a body region of a second conductivity type, and a drain region of the first conductivity type in the semiconductor substrate.
Dependencies are inferred from the claim text.