Semiconductor device including insulating layer of cubic system or tetragonal system

A semiconductor device including a capacitor having a lower electrode, an upper electrode, and an insulating layer formed between the upper electrode and the lower electrode, the insulating layer comprising:

• a zirconium-based oxide layer;
• and
• a hafnium silicate layer formed on the zirconium-based oxide layer,
• wherein the zirconium-based oxide layer and the hafnium silicate layer have crystallization of a cubic or tetragonal system.

A semiconductor device comprising:

• a semiconductor substrate including an active region;
• an interlevel insulating layer that is formed on the semiconductor substrate;
• a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the active region;
• and
• a capacitor formed on the interlevel insulating layer, the capacitor having an upper electrode, a lower electrode connected to the contact plug, and a capacitor insulating layer formed between the lower electrode and the upper electrode,
• wherein the capacitor insulating layer comprises a zirconium and hafnium containing silicate layer and has crystallization of a cubic or tetragonal system,
• wherein the lower electrode is in contact with the zirconium and hafnium containing silicate layer, and
• wherein the upper electrode comprises at least one material selected from the group of Ru, RuO2, Ir, IrO2, Pt, Ti, TiN, WN, TaN and TiAlN.