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US 8,710,563 B2Granted
Image sensor and method for fabricating the same
AssigneeDongbu HiTek Co., Ltd.
InventorsYoung Je Yun, Min Sung Kim
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Abstract
The present invention discloses an image sensor including photodiodes formed in a semiconductor substrate, a color filter array formed over the photodiodes, and microlenses formed on the color filter array. A first microlens, which may be any one of two adjacent microlenses, includes an upper portion and a lower portion. The lower portion of the first microlens is formed of a material different than a material of the upper portion of the first microlens.
Claims13
An image sensor comprising:
- a plurality of photodiodes in a semiconductor substrate;
- a color filter array over the plurality of photodiodes;
- and
- a plurality of microlenses on the color filter array,
- wherein a first microlens of two adjacent ones of the plurality of microlenses includes an upper portion and a lower portion, and the lower portion of the first microlens comprises a material different from a material of the upper portion of the first microlens.
2 more elements
Dependencies are inferred from the claim text.