Solid-state imaging apparatus, method of manufacturing solid-state imaging apparatus, and electronic apparatus

An electronic apparatus comprising:

• an optical lens;
• a back-illuminated solid-state imaging apparatus to which light collected in the optical lens enters, the back-illuminated solid-state imaging apparatus including
• a photoelectric conversion unit including
• a transfer gate electrode formed on a semiconductor substrate, and
• an electric charge storage area that is formed from a surface side of the semiconductor substrate in a depth direction, the electric charge storage area being formed of a first conductive type impurity area that is formed so as to partially overlap the transfer gate electrode,
• a transfer auxiliary area formed of a second conductive type impurity area that is formed so as to partially overlap the transfer gate electrode, the transfer auxiliary area being formed in an upper layer of the electric charge storage area, and
• a dark current suppression area that is formed in an upper layer of the transfer auxiliary area in such a manner that an end portion of the dark current suppression area on a side overlapping the transfer gate electrode has positional alignment with an end portion of the transfer auxiliary area on a side overlapping the transfer gate electrode, the dark current suppression area being formed of an impurity area of a conductive type the same as that of the transfer auxiliary area and wherein the impurity area has the same conductive type in a higher concentration than that of the transfer auxiliary area;
• and
• a signal processing circuit configured to process a signal output from the back-illuminated solid-state imaging apparatus.