Semiconductor device having a triple gate transistor and method for manufacturing the same

A semiconductor device comprising:

• a semiconductor wafer;
• and
• a triple-gate transistor formed on the semiconductor wafer, the triple-gate transistor comprising:
• an active region having three current-carrying surfaces, including a current-carrying top surface and two current-carrying side surfaces, wherein the three current-carrying surfaces are formed in crystal planes of a same crystal orientation, and wherein the active region is oriented in a first direction;
• a gate dielectric on the current-carrying top and side surfaces of the active region;
• a top channel in the current-carrying top surface of the active region and side channels in the current-carrying side surfaces of the active region;
• and
• gate electrodes on the gate dielectric corresponding to the top and side channels and aligned perpendicular to the active region such that current flows in the first direction,
• wherein an intersection of the current-carrying top and side surfaces of the active region is curved.