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US 8,710,543 B2Granted
Cascode circuit device with improved reverse recovery characteristic
AssigneeSharp Kabushiki Kaisha
InventorYuhji Ichikawa
Life of this patent
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Abstract
A semiconductor device including: an FET; a MOSFET having a drain thereof connected with a source of the FET; a resistor having one end thereof connected with a gate of the FET and having the other end thereof connected with a source of the MOSFET; and a diode having an anode thereof connected with the gate of the FET and having a cathode thereof connected with the source of the MOSFET.
Claims4
A semiconductor device comprising:
- a first field-effect transistor being of a normally-on type;
- a second field-effect transistor being of a normally-off type and having a drain thereof connected with a source of the first field-effect transistor;
- a resistor having one end thereof connected with a gate of the first field-effect transistor and having the other end thereof connected with a source of the second field-effect transistor;
- a diode having an anode thereof connected with the gate of the first field-effect transistor;
- and
- a capacitor having one end thereof connected with a drain of the first field-effect transistor and having the other end thereof connected with a cathode of the diode,
- wherein the diode and the capacitor are directly connected in series with each other.
4 more elements
An electronic device comprising a semiconductor device,
- the semiconductor device including:
- a first field-effect transistor being of a normally-on type;
- a second field-effect transistor being of a normally-off type and having a drain thereof connected with a source of the first field-effect transistor;
- a resistor having one end thereof connected with a gate of the first field-effect transistor and having the other end thereof connected with a source of the second field-effect transistor;
- a diode having an anode thereof connected with the gate of the first field-effect transistor;
- and
- a capacitor having one end thereof connected with a drain of the first field-effect transistor and having the other end thereof connected with a cathode of the diode,
- wherein the diode and the capacitor are directly connected in series with each other.
5 more elements
Dependencies are inferred from the claim text.