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US 8,710,530 B2Granted
Light emitted diode
AssigneeLextar Electronics Corporation
InventorsShih Pu Yang, Jui-Yi Chu
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Abstract
The present invention relates to a light emitted diode (LED). The LED includes a metal mirror, a bonding substrate, a distributed bragg reflector (DBR), a buffer layer, and a LED epitaxial structure. The bonding substrate is arranged under the metal mirror. The DBR is arranged on the metal mirror. The buffer layer is arranged on the DBR. The LED epitaxial structure is arranged on the buffer layer.
Claims16
A light emitting diode, comprising:
- a metal mirror;
- a bonding substrate, arranged under the metal mirror;
- a distributed bragg reflector, arranged on the metal mirror;
- a buffer layer, arranged on the distributed bragg reflector;
- and
- a light emitting diode epitaxial structure arranged on the buffer layer, and the light emitting diode epitaxial structure comprising:
- a first semiconductor layer arranged on the buffer layer;
- an active layer arranged on the first semiconductor layer;
- a second semiconductor layer arranged on the active layer;
- a first electrode arranged on the first semiconductor layer;
- and
- a second electrode arranged on the second semiconductor layer.
9 more elements
A light emitting diode, comprising:
- a metal mirror;
- a bonding substrate, arranged under the metal mirror;
- a distributed bragg reflector, arranged on the metal mirror;
- a buffer layer, arranged on the distributed bragg reflector;
- and
- a light emitting diode epitaxial structure, arranged on the buffer layer;
- wherein the metal mirror comprises of In, Al, Ti, Au, W, InSn, TiN, WSi, PtIn2, Nd/Al, Ni/Si, Pd/Al, Ta/Al, Ti/Ag, Ta/Ag, Ti/Al, Ti/Au, Ti/TiN, Zr/ZrN, Au/Ge/Ni, Cr/Ni/Au, Ni/Cr/Au, Ti/Pd/Au, Ti/Pt/Au, Ti/Al/Ni/Au, Au/Si/Ti/Au/Si, and Au/Ni/Ti/Si/Ti or a group formed of the alloy metal thereof;
- wherein the light emitting diode epitaxial structure comprising:
- a first semiconductor layer arranged on the buffer layer;
- an active layer arranged on the first semiconductor layer;
- a second semiconductor layer arranged on the active layer;
- a first electrode arranged on the first semiconductor laver;
- and
- a second electrode arranged on the second semiconductor layer.
11 more elements
Dependencies are inferred from the claim text.