Light emitting diode having multi-cell structure and method of manufacturing the same
AssigneeKorea Photonics Technology Institute
InventorsSang-Mook Kim, Jong-Hyeob Baek, Kwang-Cheol Lee, Eun-Mi Yoo
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Abstract
Disclosed is a light emitting diode having a multi-cell structure including a number of unit cells. The light emitting diode is capable of reducing light loss of the light emitting diode surface and improving light efficiency by bonding pads to be formed for contact between mesa etching regions for forming an electrode of the existing n-type semiconductor layers and p-type semiconductor layers. The light emitting diode is also capable of controlling chip size and manufacturing chips of different sizes from each other even when going through the same chip manufacturing process as the related art.
Claims20
A light emitting diode having a multi-cell structure including unit cells, comprising:
- a translucent substrate;
- a first semiconductor layer, an active layer and a second semiconductor layer sequentially formed on the translucent substrate;
- a plurality of holes formed to be spaced apart from each other by partially removing the region of the second semiconductor layer and the active layer;
- a first electrode being in contact with the first semiconductor layer through some holes of the plurality of holes, and formed so that the top surface thereof is exposed outside;
- a first protection film wrapping a side circumference of the first electrode to prevent a short between the first semiconductor and the second semiconductor;
- a second protection film formed on sides and bottom surfaces of holes, not having the first electrode, of the plurality of holes;
- a reflective layer or a current diffusion layer formed on the second protection film and the second semiconductor layer;
- and
- a second electrode formed on the reflective layer or the current diffusion layer.
A method of fabricating a light emitting diode having a multi-cell structure, comprising:
- sequentially forming a first semiconductor layer, an active layer and a second semiconductor layer on a translucent substrate;
- forming a plurality of holes by removing the second semiconductor layer and active layer so that a top surface of the first semiconductor layer is exposed after patterning and etching for each region to be spaced at a predetermined interval on the second semiconductor layer;
- forming a first protection film on the side of some holes of the plurality of holes;
- forming a first electrode being in contact with the first semiconductor layer through holes formed with the first protection film, and formed so that the top surface thereof is exposed outside;
- forming a second protection film formed on sides and bottom surfaces of holes, not having the first electrode, of the plurality of holes;
- forming a reflective layer or a current diffusion layer in the holes formed with the second protection film and on the second semiconductor layer;
- and
- forming a second electrode formed on the reflective layer or the current diffusion layer and being in contact with the second semiconductor layer.
Dependencies are inferred from the claim text.