High-voltage AC light-emitting diode structure
AssigneeHelio Optoelectronics Corporation
InventorsChing-Jen Pan, Wei-Tai Cheng, Ming-Hung Chen
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Abstract
A high-voltage alternating current (AC) light-emitting diode (LED) structure is provided. The high-voltage AC LED structure includes a circuit substrate and a plurality of high-voltage LED (HV LED) chips. Each one of the HV LED chips includes a first substrate, an adhering layer, first ohmic contact layers, epi-layers, a first insulating layer, at least two first electrically conducting plates, at least two second electrically conducting plates, and a second substrate. The HV LED chips manufactured by a wafer-level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.
Claims19
A high-voltage alternating current (AC) light-emitting diode (LED) structure, comprising:
- a circuit substrate;
- and
- a plurality of high-voltage LED chips fixed to and electrically connected to the circuit substrate and forming a series-connected circuit by means of the circuit substrate, the high-voltage LED chips each comprising:
- a first substrate having a first surface and a second surface;
- an adhering layer formed on the first surface;
- at least two first ohmic contact layers formed on the adhering layer;
- at least two epi-layers having a first groove formed between any two adjacent said epi-layers, the epi-layers each comprising:
- a lower cladding layer formed on a corresponding one of the first ohmic contact layers;
- an active layer formed on the lower cladding layers;
- and an upper cladding layer formed on the active layer;
- a first insulating layer covering exposed surfaces of each of the first ohmic contact layers and exposed surfaces of each of the upper cladding layers, and forming between any two of the first ohmic contact layers, wherein a first opening and a second opening corresponding in position to each of the upper cladding layers and a bare portion of each of the first ohmic contact layers, respectively, are formed in the first insulating layer;
- at least two first electrically conducting plates each formed inside a corresponding one of the first openings and electrically connected to a corresponding one of the upper cladding layers;
- at least two second electrically conducting plates each formed inside a corresponding one of the second openings and electrically connected to a corresponding one of the first ohmic contact layers;
- and
- a second substrate having a third surface, wherein at least two third electrically conductive plates and at least two fourth electrically conductive plates are formed on the third surface;
- the second substrate having a plurality of traces formed thereon for electrically connecting the third electrically conductive plates and the fourth electrically conductive plates, wherein each of the third electrically conductive plates and each of the fourth electrically conductive plates are electrically connected to a corresponding one of the second electrically conducting plates and/or a corresponding one of the first electrically conducting plates, respectively, by a solder joint, the first substrate being transparent, the adhering layer being transparent, and wherein a reflective layer is formed on the third surface in a manner that the reflective layer thus formed is positioned outside the third electrically conductive plates and the fourth electrically conductive plates.
A high-voltage alternating current (AC) light-emitting diode (LED) structure, comprising:
- a circuit substrate;
- and
- a plurality of high-voltage LED chips fixed to and electrically connected to the circuit substrate and forming a series-connected circuit by means of the circuit substrate, the high-voltage LED chips each comprising:
- a first substrate having a first surface and a second surface;
- an adhering layer formed on the first surface;
- at least two first ohmic contact layers formed on the adhering layer;
- at least two epi-layers each comprising:
- a lower cladding layer formed on a corresponding one of the first ohmic contact layers;
- an active layer formed on the lower cladding layers;
- an upper cladding layer formed on the active layer;
- and a second groove penetrating the upper cladding layers and the active layer perpendicularly and penetrating the lower cladding layers partially;
- a second insulating layer covering each of the upper cladding layers and forming between any two of the epi-layers and any two of the first ohmic contact layers, wherein a third opening and a fourth opening corresponding in position to each of the upper cladding layers and an inner side of the second groove, respectively, are formed in the second insulating layer;
- at least two fifth electrically conductive plates formed in each of the third openings, respectively, and electrically connected to the upper cladding layers;
- and
- at least two sixth electrically conductive plates formed in each of the fourth openings, respectively, and having an extension portion extending downward, the extension portion penetrating the epi-layers perpendicularly and being electrically connected to the first ohmic contact layers.
Dependencies are inferred from the claim text.