Optoelectronic semiconductor chip comprising a reflective layer
AssigneeOSRAM Opto Semiconductors GmbH
InventorsTony Albrecht, Andreas Weimar, Anna Kasprzak-Zablocka, Christian Eichinger, Kerstin Neveling
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Abstract
An optoelectronic semiconductor chip, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.
Claims14
An optoelectronic semiconductor chip comprising:
- a semiconductor body, having a top side with a first contact location and an underside with a second contact location;
- a reflective layer in direct contact with the semiconductor body and directly electrically conductively connected to the second contact location, wherein the reflective layer contains a metal that tends toward migration;
- the semiconductor chip having a chip sidewall extending between the top side and the underside of the semiconductor body;
- and
- an electrically conductive material arranged at the chip sidewall, the electrically conductive material being directly electrically conductively connected to the second contact location and the reflective layer;
- wherein said electrically conductive material comprises a radiation-transmissive, conductive oxide, and
- wherein the radiation-transmissive conductive oxide forming the electrically conductive material arranged at the chip sidewall is in direct contact with the reflective layer.
Dependencies are inferred from the claim text.